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Samsung MZ-V9P1T0 1TB PCIe NVMe 4.0 x4 M.2 2280 SSD
- Capacity: 1TB
- Form Factor: M.2 2280
- Interface: PCIe Gen4 x4
- Protocol: NVMe 1.4
- Sequential Read Speed: Up to 7,000 MB/s
- Sequential Write Speed: Up to 5,100 MB/s
- Random Read IOPS: Up to 1,000,000
- Random Write IOPS: Up to 1,000,000
- Endurance (TBW): 600 TBW
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Product Overview
The Samsung MZ-V9P1T0 is a 1TB PCIe NVMe Gen4 M.2 2280 Solid State Drive. It utilizes NVMe 4.0 x4 interface for high-speed data transfer, making it suitable for demanding gaming, content creation, and professional workloads.
Technical Information
| Capacity | 1TB |
| Form Factor | M.2 2280 |
| Interface | PCIe Gen4 x4 |
| Protocol | NVMe 1.4 |
| Sequential Read Speed | Up to 7,000 MB/s |
| Sequential Write Speed | Up to 5,100 MB/s |
Additional Specifications
| Random Read IOPS | Up to 1,000,000 |
| Random Write IOPS | Up to 1,000,000 |
| Endurance (TBW) | 600 TBW |
| Controller | Samsung Elpis Controller |
| NAND Flash | Samsung V-NAND |
Product Description
The Samsung MZ-V9P1T0 is a cutting-edge 1TB NVMe Solid State Drive designed to deliver exceptional performance for the most demanding computing tasks. Leveraging the PCIe Gen4 x4 interface, it achieves blistering read and write speeds, significantly reducing load times for operating systems, applications, and large files. This makes it an ideal choice for gamers, content creators, and professionals who require rapid data access. This M.2 2280 form factor drive utilizes the NVMe 1.4 protocol, which is optimized for flash storage and offers lower latency and higher throughput compared to traditional SATA interfaces. With sequential read speeds reaching up to 7,000 MB/s and sequential write speeds up to 5,100 MB/s, the MZ-V9P1T0 ensures that data-intensive operations are completed in a fraction of the time. Beyond raw speed, the drive boasts impressive random read and write IOPS (Input/Output Operations Per Second), reaching up to 1,000,000 IOPS for both. This translates to superior responsiveness in multitasking environments and when handling numerous small files. The 600 TBW (Terabytes Written) endurance rating indicates a robust lifespan, suitable for heavy usage scenarios. Equipped with Samsung's Elpis controller and V-NAND flash memory, this SSD represents the pinnacle of storage technology for high-performance computing.
