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Samsung M470L3224DT0-LB 256MB DDR-266MHz PC2100 CL2.5 RDIMM 2.5V Memory
- Capacity: 256MB
- Type: DDR SDRAM
- Speed: 266MHz (PC2100)
- Form Factor: 184-Pin RDIMM
- Features: Registered (Buffered)
- CAS Latency: CL2.5
- Voltage: 2.5V
- Configuration: Dual Rank
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Product Overview
The Samsung M470L3224DT0-LB is a 256MB DDR SDRAM module designed for server and workstation environments. It operates at 266MHz (PC2100) and features CL2.5 timings. This RDIMM (Registered DIMM) includes onboard registers to reduce electrical load on the memory controller, enhancing stability and allowing for higher memory capacities.
Technical Information
| Memory Type | DDR SDRAM |
| Capacity | 256MB |
| Speed | 266MHz |
| PC Speed Rating | PC2100 |
| Form Factor | 184-Pin RDIMM |
Additional Specifications
| ECC Support | ECC (implied by RDIMM) |
| Buffering | Registered (Buffered) |
| CAS Latency | CL2.5 |
| Voltage | 2.5V |
| Rank | Dual |
Product Description
The Samsung M470L3224DT0-LB is a 256MB DDR SDRAM module specifically designed for server and workstation applications that require enhanced memory stability and scalability. It operates at a frequency of 266MHz, corresponding to the PC2100 standard, which defines its theoretical peak bandwidth. This speed was a common choice for systems prioritizing reliability and performance. This module is a Registered DIMM (RDIMM), which means it incorporates onboard registers. These registers buffer the data, command, and address signals between the memory controller and the DRAM chips. This buffering significantly reduces the electrical load on the memory controller, allowing for more memory modules to be installed and enabling higher overall system memory capacities and improved signal integrity, crucial for server environments. Featuring a CAS Latency (CL) of 2.5, this RDIMM provides a balance between performance and stability. The 184-pin connector is standard for DDR DIMMs. Operating at 2.5V, it adheres to the power specifications for DDR memory. The dual-rank configuration can offer performance benefits in certain memory architectures by allowing the memory controller to access different ranks concurrently.
