
Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
Samsung M393B1G70QH0-CK008 8GB DDR3-1600MHz RDIMM 1Rx4 CL11 Memory
- Capacity: 8GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 1600MHz (PC3-12800)
- CAS Latency: CL11
- Configuration: 1Rx4 (Single Rank, x4 Data Width per Chip)
- ECC: Yes (Registered DIMMs typically support ECC)
- Voltage: 1.5V (Standard for DDR3)
Click on Inquire to get latest price
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
The Samsung M393B1G70QH0-CK008 is an 8GB DDR3 RDIMM (Registered DIMM) memory module. It operates at a speed of 1600MHz (PC3-12800) with timings of CL11. This module features a 1Rx4 rank configuration, indicating a single rank of memory chips per module, with four chips per rank.
Technical Information
| Capacity | 8GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1600MHz |
Additional Specifications
| Part Number | M393B1G70QH0-CK008 |
| Rank | 1Rx4 |
| CAS Latency | CL11 |
| Brand | Samsung |
Product Description
The Samsung M393B1G70QH0-CK008 is an 8GB DDR3 Registered DIMM (RDIMM) memory module, designed for server and workstation applications requiring reliable memory performance. It operates at a frequency of 1600MHz, providing a data transfer rate of PC3-12800, which is suitable for a variety of computing tasks. This module utilizes a 1Rx4 configuration, meaning it consists of a single rank of memory chips, with each chip having a 4-bit data width. This configuration is common for DDR3 RDIMMs and offers a good balance of density and performance. As an RDIMM, it includes a register chip that buffers command and address signals, reducing the electrical load on the memory controller. This allows for higher memory capacities and improved system stability, particularly in systems with multiple memory channels. The module has a CAS Latency (CL) of 11, indicating the number of clock cycles required to access a particular column of data. This timing is standard for DDR3-1600 modules. Like most server-grade memory, it supports ECC (Error-Correcting Code) functionality, which is crucial for detecting and correcting memory errors, thereby ensuring data integrity and minimizing system downtime in critical environments.



