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Samsung M393AAG40M3B-CYFC0 128GB DDR4-2933MHz RDIMM 4Rx4 CL21 Memory

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Samsung M393AAG40M3B-CYFC0 128GB DDR4-2933MHz RDIMM 4Rx4 CL21 Memory

SKU M393AAG40M3B-CYFC0
Brand Samsung
  • Capacity: 128GB
  • Type: DDR4 SDRAM
  • Form Factor: RDIMM (Registered DIMM)
  • Speed: 2933MHz (PC4-23466)
  • CAS Latency: CL21
  • Configuration: 4Rx4 (Quad Rank, x4 Data Width)
  • Voltage: 1.2V
  • ECC: Yes (Error-Correcting Code)
  • Designed for servers and high-performance workstations
In Stock
$920.00

Was $1,082.00 · You save $162.00

Key specifications

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Product Type
Memory Module
Capacity
128GB
Memory Technology
DDR4 SDRAM
Form Factor
RDIMM
Speed
2933MHz
CAS Latency
CL21

Product details

The Samsung M393AAG40M3B-CYFC0 is a high-capacity 128GB DDR4 RDIMM (Registered DIMM) memory module. It operates at a speed of 2933MHz with a CL21 latency and features a 4Rx4 configuration, making it suitable for demanding server and workstation applications requiring significant memory resources.

Technical Information

Product TypeMemory Module
Capacity128GB
Memory TechnologyDDR4 SDRAM
Form FactorRDIMM

Additional Specifications

Speed2933MHz
CAS LatencyCL21
Rank4Rx4
ECCYes

Description

The Samsung M393AAG40M3B-CYFC0 is a high-performance 128GB DDR4 Registered DIMM (RDIMM) memory module, engineered for server and workstation environments that demand substantial memory capacity and reliability. Operating at a frequency of 2933MHz, it provides excellent bandwidth for data-intensive applications, virtualization, large databases, and complex computational tasks. The RDIMM form factor includes an onboard register that buffers command and address signals, reducing electrical load on the memory controller and allowing for higher memory capacities and improved stability in multi-module configurations. This module features a 4Rx4 rank organization, meaning it utilizes four ranks of memory chips, each with an x4 data width. This configuration is often employed in high-capacity modules to achieve the total density while potentially offering performance benefits in certain memory access patterns. The CAS Latency (CL) of 21 indicates the number of clock cycles required for the memory to respond to a column address command. While higher latency, the speed and capacity often outweigh this in server workloads where throughput is prioritized. As an ECC (Error-Correcting Code) memory module, the M393AAG40M3B-CYFC0 can detect and correct common types of internal data corruption, significantly enhancing data integrity and system reliability. This is a critical feature for mission-critical applications where data accuracy and uptime are paramount. With its substantial capacity, high speed, and robust features, this Samsung memory module is an ideal choice for upgrading or populating servers and workstations designed to handle demanding workloads.

Condition: Refurbished

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