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Samsung M393A1G40EB2-CTD60 8GB DDR4-2666MHz RDIMM 1Rx4 CL19 Memory
- Capacity: 8GB
- Type: DDR4 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 2666MHz (PC4-21300)
- Latency: CL19
- Rank: 1Rx4 (Single Rank x4)
- Voltage: 1.2V
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Samsung M393A1G40EB2-CTD60 is a high-performance 8GB DDR4 RDIMM memory module designed for servers and workstations. It operates at a speed of 2666MHz with a CL19 latency, offering efficient data transfer for demanding applications.
Technical Information
| Memory Size | 8GB |
| Memory Type | DDR4 SDRAM |
| Form Factor | RDIMM |
| Speed | 2666MHz |
Additional Specifications
| CAS Latency | CL19 |
| Rank | 1Rx4 |
| Voltage | 1.2V |
Product Description
This 8GB DDR4 Registered DIMM (RDIMM) from Samsung, model M393A1G40EB2-CTD60, is engineered for enhanced reliability and performance in enterprise environments. Operating at a frequency of 2666MHz, it provides a substantial bandwidth crucial for memory-intensive tasks such as virtualization, large database operations, and high-performance computing. The 1Rx4 organization signifies a single-rank configuration with four data bits per chip, contributing to efficient signal integrity and thermal performance. The CL19 CAS latency ensures timely data access, balancing speed with stability. As an RDIMM, it features an onboard register that buffers command and address signals, reducing electrical load on the memory controller and allowing for higher memory capacities and speeds. Designed to meet the rigorous demands of server and workstation applications, this module supports ECC (Error-Correcting Code) functionality, which detects and corrects single-bit errors, thereby improving system stability and data integrity. Its 1.2V operating voltage aligns with the DDR4 standard, promoting power efficiency. This memory module is an ideal upgrade for systems requiring increased capacity and faster data processing capabilities.
