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Samsung M392B2G70BM0-YH9M8 16GB DDR3-1333MHz VLP RDIMM 2Rx4 CL9 Memory

Samsung M392B2G70BM0-YH9M8 16GB DDR3-1333MHz VLP RDIMM 2Rx4 CL9 Memory

SKU:M392B2G70BM0-YH9M8
  • Samsung Memory Module
  • Capacity: 16GB
  • Type: DDR3 SDRAM
  • Speed: 1333MHz (PC3-10600)
  • Form Factor: VLP RDIMM (Very Low Profile Registered DIMM)
  • Configuration: 2Rx4 (Dual Rank x4)
  • Latency: CL9
  • Designed for servers and workstations
  • ECC Registered memory
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Details

Product Overview

This Samsung memory module is a 16GB DDR3-1333MHz VLP RDIMM. It features a 2Rx4 configuration and CL9 latency, designed for servers and high-performance workstations requiring reliable and fast memory.

Technical Information

BrandSamsung
Part NumberM392B2G70BM0-YH9M8
Capacity16GB
Memory TypeDDR3 SDRAM
Speed1333MHz

Additional Specifications

Form FactorVLP RDIMM
Rank2Rx4
CAS LatencyCL9
ECCRegistered

Product Description

The Samsung M392B2G70BM0-YH9M8 is a high-capacity 16GB memory module engineered for server and workstation environments that demand reliability and performance. This module utilizes DDR3 SDRAM technology, operating at a speed of 1333MHz, which corresponds to a PC3-10600 designation. The speed ensures efficient data transfer between the memory and the CPU, crucial for demanding applications and multitasking scenarios. This module is a Very Low Profile (VLP) Registered DIMM (RDIMM). The VLP form factor is particularly useful in dense server configurations where height clearance can be a constraint, such as in 1U or 2U rackmount servers. As a Registered DIMM, it includes an onboard register that buffers command and address signals, reducing electrical load on the memory controller and allowing for more memory modules to be installed per channel, thereby increasing system stability and capacity. It also supports Error-Correcting Code (ECC) functionality, which detects and corrects single-bit errors, enhancing data integrity and system reliability. The 2Rx4 configuration indicates that the module is dual-rank, with each rank composed of x4 (4-bit wide) DRAM chips. This configuration can offer performance benefits in certain memory access patterns. With a CAS Latency (CL) of 9, it represents a balance between speed and timing for DDR3 memory. This Samsung memory module is an ideal choice for upgrading or populating servers and workstations that require robust, high-speed, and reliable memory solutions for critical operations.

Condition:Refurbished

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