#upgradetobetter

Home/Memory/Server Memory/Samsung M386AAG40BM3-CWE 128GB DDR4-3200MHz LRDIMM...
Samsung M386AAG40BM3-CWE 128GB DDR4-3200MHz LRDIMM 4Rx4 CL22 Memory

Samsung M386AAG40BM3-CWE 128GB DDR4-3200MHz LRDIMM 4Rx4 CL22 Memory

SKU:M386AAG40BM3-CWE
  • 128GB DDR4 SDRAM
  • Speed: 3200MHz
  • Form Factor: LRDIMM (Load-Reduced DIMM)
  • ECC: Yes
  • Rank: 4Rx4 (Quad Rank, x4 organization)
  • Latency: CL22
  • Voltage: 1.2V
In Stock
List Price:$2,749.06Save $412.06
$2,337
00USD
Qty

Free U.S. Ground Shipping

Typically 1-2 handling + 3-7 transit days

Purchase orders accepted

For government, enterprise, data center, and small business customers.

Bulk Purchase Inquiry

Volume pricing and availability

Details

Product Overview

This Samsung 128GB LRDIMM memory module is designed for enterprise servers requiring massive memory capacity. It operates at DDR4-3200MHz with ECC support and a 4Rx4 configuration for optimal performance and scalability.

Technical Information

Memory TypeDDR4 SDRAM
Capacity128GB
Speed3200MHz
Form FactorLRDIMM

Additional Specifications

ECCYes
Rank4Rx4
CAS LatencyCL22
Voltage1.2V

Product Description

The Samsung M386AAG40BM3-CWE is a massive 128GB DDR4 Load-Reduced DIMM (LRDIMM) memory module, specifically engineered for enterprise-grade servers that require extremely high memory capacities. Operating at a robust speed of 3200MHz, this module provides substantial bandwidth to support the most demanding data-intensive applications, including large-scale virtualization, in-memory databases, and high-performance computing clusters. This LRDIMM features Error-Correcting Code (ECC) technology, which is critical for ensuring the highest levels of data integrity and system stability in mission-critical server environments. ECC detects and corrects multi-bit errors, offering superior reliability compared to standard ECC modules. The 4Rx4 configuration signifies a quad-rank module with an x4 memory chip organization, which, combined with the LRDIMM's buffer chip, significantly reduces the electrical load on the memory controller, enabling higher memory densities and improved system performance. With a CAS Latency of CL22 and a standard operating voltage of 1.2V, this memory module is designed for optimal performance and reliability in demanding server configurations. The load-reduced design is essential for systems that push memory limits, allowing for greater scalability and the ability to handle vast datasets efficiently. This Samsung LRDIMM is an ideal choice for data centers and high-performance computing environments seeking maximum memory capacity and robust data protection.

Condition:Refurbished

Related Products

Loading Related Inventory...