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Samsung M378B1G73EB0YKO 8GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Vo...
- Capacity: 8GB
- Memory Type: DDR3 SDRAM
- Speed: 1600MHz (PC3-12800)
- Form Factor: 240-Pin DIMM
- Features: Non-ECC, Unbuffered
- Voltage: 1.35V Low Voltage
- CAS Latency: CL11
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Product Overview
The Samsung M378B1G73EB0YKO is a high-performance 8GB DDR3 SDRAM module designed for desktop computers. It operates at a speed of 1600MHz (PC3-12800) with a CAS latency of 11, offering efficient multitasking and application responsiveness. This non-ECC, unbuffered DIMM operates at a low voltage of 1.35V, contributing to power efficiency.
Technical Information
| Memory Size | 8GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1600MHz |
| Part Number | M378B1G73EB0YKO |
Additional Specifications
| Voltage | 1.35V |
| ECC | Non-ECC |
| Buffered | Unbuffered |
| Pin Count | 240-Pin |
Product Description
This Samsung 8GB DDR3 memory module, identified by the SKU M378B1G73EB0YKO, is engineered to enhance the performance of desktop systems. With a data transfer rate of 1600MHz, it significantly speeds up operations compared to lower-frequency modules, making it suitable for demanding applications and multitasking environments. The PC3-12800 designation indicates its bandwidth capability, ensuring efficient data flow. The module adheres to the JEDEC standard for DDR3 memory, featuring a 240-pin DIMM form factor commonly found in modern motherboards. Its non-ECC (Error-Correcting Code) nature means it is designed for standard desktop use where data integrity is managed by the CPU or operating system, rather than dedicated memory hardware. The unbuffered design further contributes to its suitability for consumer-grade systems, offering a balance of performance and cost-effectiveness. Operating at a reduced voltage of 1.35V (often referred to as Low Voltage or LV), this RAM module is more power-efficient than standard DDR3 modules that operate at 1.5V. This lower power consumption can lead to reduced heat generation and potentially contribute to energy savings in systems with multiple memory modules. The CAS Latency (CL) of 11 signifies the number of clock cycles required for the memory to respond to a command, providing a specific performance metric for this module.
