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Samsung M368L2923CUN-CCC-N 1GB DDR-400MHz PC3200 Non-ECC Unbuffered CL3 184-Pin UDIMM 2.5V Dual Rank...
- 1GB DDR Memory Module
- Speed: 400MHz (PC3200)
- Latency: CL3
- Form Factor: 184-Pin UDIMM
- Voltage: 2.5V
- Dual Rank configuration
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Product Overview
This Samsung M368L2923CUN-CCC-N is a 1GB DDR memory module designed for reliable performance. It operates at 400MHz with a PC3200 speed rating and features Non-ECC Unbuffered architecture.
Technical Information
| Capacity | 1GB |
| Memory Type | DDR |
| Speed | 400MHz |
| PC Speed | PC3200 |
| ECC Type | Non-ECC |
| Buffering | Unbuffered |
Additional Specifications
| CAS Latency | CL3 |
| Pin Count | 184-Pin |
| Form Factor | UDIMM |
| Voltage | 2.5V |
| Rank | Dual Rank |
Product Description
The Samsung M368L2923CUN-CCC-N is a high-quality memory module engineered to enhance system performance. With a capacity of 1GB, it provides a significant boost for applications requiring more memory resources. Its DDR technology ensures efficient data transfer rates, making it suitable for a wide range of computing tasks. Operating at a frequency of 400MHz, this module corresponds to a PC3200 speed rating, indicating its capability to handle demanding workloads. The Non-ECC (Error-Correcting Code) and Unbuffered design are standard for many desktop and server environments where data integrity checks are managed by the CPU or motherboard. This configuration often leads to lower latency and higher clock speeds. The module features a CL3 CAS Latency, which refers to the number of clock cycles required to access a particular memory address. Its 184-pin UDIMM form factor is compatible with a broad spectrum of motherboards, and the 2.5V operating voltage ensures energy efficiency. The Dual Rank architecture can offer improved performance by allowing the memory controller to access different sets of memory chips simultaneously.
