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Samsung M368L2923BTM-CC 1GB DDR-400MHz PC3200 Non-ECC Unbuffered CL3 184-Pin UDIMM 2.5V Dual Rank Me...
- 1GB DDR SDRAM capacity
- 400MHz (PC3200) memory speed
- Non-ECC (Error-Correcting Code) functionality
- Unbuffered memory type
- CL3 (CAS Latency 3) timing
- 184-pin UDIMM form factor
- Dual Rank configuration
- Operates at 2.5V voltage
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Product Overview
The Samsung M368L2923BTM-CC is a 1GB DDR SDRAM module designed for high-performance computing. It operates at a speed of 400MHz (PC3200) and features a CL3 latency, making it suitable for demanding applications.
Technical Information
| Capacity | 1GB |
| Memory Type | DDR SDRAM |
| Speed | 400MHz (PC3200) |
| Form Factor | 184-Pin UDIMM |
| ECC | Non-ECC |
Additional Specifications
| Buffering | Unbuffered |
| Latency | CL3 |
| Voltage | 2.5V |
| Rank | Dual Rank |
Product Description
This Samsung memory module, identified by SKU M368L2923BTM-CC, is engineered to deliver reliable and efficient performance for desktop and workstation systems. Its 1GB capacity and DDR technology provide a solid foundation for multitasking and running various applications. The module adheres to the PC3200 standard, signifying its operational speed of 400MHz, which is crucial for maintaining system responsiveness. The Non-ECC nature means it is designed for standard computing environments where data integrity is not paramount to the extent of ECC memory, such as in many consumer PCs. The Unbuffered design further contributes to its suitability for a broad range of motherboards. With a 184-pin UDIMM interface, this module is compatible with DDR DIMM slots. The CL3 latency rating indicates the number of clock cycles required to access data, offering a balance between speed and stability. The Dual Rank configuration can potentially enhance performance by allowing the memory controller to access different sets of memory chips simultaneously, further optimizing data throughput.
