Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
PNY MD1024SD1-400-B2 1GB DDR-400MHz PC3200 Non-ECC Unbuffered CL3 184-Pin UDIMM 2.5V Dual Rank Memor...
- Capacity: 1GB
- Type: DDR SDRAM
- Speed: 400MHz (PC3200)
- Form Factor: UDIMM (Unbuffered DIMM)
- ECC: Non-ECC
- CAS Latency: CL3
- Pins: 184-Pin
- Voltage: 2.5V
- Rank: Dual Rank
Click on Inquire to get latest price
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
The PNY MD1024SD1-400-B2 is a 1GB DDR-400MHz PC3200 Non-ECC Unbuffered UDIMM memory module. It is designed for systems requiring reliable, high-speed memory for enhanced performance.
Technical Information
| Product Type | Memory Module |
| Capacity | 1GB |
| Memory Technology | DDR SDRAM |
| Speed | 400MHz (PC3200) |
| Form Factor | UDIMM |
| ECC Support | Non-ECC |
Additional Specifications
| CAS Latency | CL3 |
| Pins | 184-Pin |
| Voltage | 2.5V |
| Rank | Dual Rank |
| Manufacturer | PNY |
| Part Number | MD1024SD1-400-B2 |
Product Description
The PNY MD1024SD1-400-B2 is a 1GB DDR SDRAM memory module designed to boost the performance of compatible computer systems. Operating at a speed of 400MHz, which corresponds to the PC3200 standard, this module offers a significant improvement in data transfer rates compared to older DDR generations. It is an Unbuffered DIMM (UDIMM) and a Non-Error Correcting Code (Non-ECC) module, making it suitable for a wide range of desktop computers and workstations where advanced error correction is not a primary requirement. This memory module features an 184-pin configuration and operates at a voltage of 2.5V, which are standard specifications for DDR memory. The CAS Latency (CL) of 3 is a common timing parameter for DDR-400 modules, ensuring efficient data access. The designation of 'Dual Rank' indicates that the memory chip is organized into two independent sets of memory addresses, which can enhance performance by allowing the memory controller to access data from different ranks simultaneously, potentially improving throughput in multi-tasking scenarios. With a 1GB capacity, this PNY memory module provides a substantial upgrade for systems that may be equipped with less memory, enabling smoother operation of applications, faster loading times, and improved overall system responsiveness. It is a reliable choice for users looking to enhance the performance of their PCs or workstations that support DDR-400MHz memory.
