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PNY DIM108GBN/12800/3-SB 8GB DDR3-1600MHz PC3-12800 Non-ECC Unbuffered CL11 240-Pin UDIMM 1.5V Dual ...
- Capacity: 8GB
- Memory Type: DDR3 SDRAM
- Speed: 1600MHz (PC3-12800)
- Latency: CL11
- Form Factor: 240-Pin UDIMM
- Voltage: 1.5V
- Features: Non-ECC, Unbuffered
- Configuration: Dual Rank
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Product Overview
The PNY DIM108GBN/12800/3-SB is an 8GB DDR3 SDRAM module designed for modern computing needs. It operates at a speed of 1600MHz (PC3-12800) with a CAS Latency of 11, offering substantial capacity and performance for multitasking and demanding applications.
Technical Information
| Memory Size | 8GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1600MHz |
| PC Speed | PC3-12800 |
| CAS Latency | CL11 |
Additional Specifications
| Voltage | 1.5V |
| ECC | Non-ECC |
| Registered | Unbuffered |
| Form Factor | 240-Pin UDIMM |
| Rank | Dual Rank |
Product Description
This PNY memory module, SKU DIM108GBN/12800/3-SB, provides a robust 8GB of DDR3 memory, suitable for a wide range of desktop and workstation applications. The 1600MHz speed, also known as PC3-12800, ensures efficient data transfer rates, making it ideal for systems that handle multitasking, gaming, and content creation. Its Non-ECC and Unbuffered design makes it compatible with a broad spectrum of consumer and business-grade motherboards. The module features a standard 240-pin UDIMM form factor, designed for easy installation into DDR3-compatible slots. Operating at a voltage of 1.5V, it aligns with the power efficiency standards of the DDR3 generation. The CL11 CAS Latency indicates a moderate timing, which is typical for modules of this speed and capacity, providing a good balance between performance and stability. As a Dual Rank module, it offers increased memory bandwidth by allowing the memory controller to access different sets of memory chips independently. This can lead to performance improvements in certain scenarios, especially when paired with other compatible memory modules. This PNY RAM is a reliable choice for upgrading existing systems or building new ones that require a solid foundation of memory performance.
