
Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
Micron MTA36ASF8G72PZ-3G2E1VI 64GB DDR4-3200MHz RDIMM 2Rx4 CL22 Memory
- 64GB DDR4 Memory Capacity
- 3200MHz (PC4-25600) Speed
- RDIMM (Registered DIMM) for enhanced stability
- 2Rx4 Configuration (Dual Rank, x4 Data Width)
- CL22 CAS Latency
- ECC (Error-Correcting Code) for data integrity
- Suitable for servers, workstations, and data centers
- Standard 1.2V operating voltage
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
The Micron MTA36ASF8G72PZ-3G2E1VI is a 64GB DDR4 RDIMM memory module, clocked at 3200MHz. It features a 2Rx4 configuration and CL22 latency, designed for high-performance computing and server applications.
Technical Information
| Memory Type | DDR4 SDRAM |
| Form Factor | RDIMM |
| Capacity | 64GB |
| Speed | 3200MHz |
| Module Rank | 2Rx4 |
Additional Specifications
| CAS Latency | CL22 |
| Voltage | 1.2V |
| ECC | Yes |
| Brand | Micron |
| Part Number | MTA36ASF8G72PZ-3G2E1VI |
Product Description
The Micron MTA36ASF8G72PZ-3G2E1VI is a high-capacity 64GB DDR4 Registered DIMM (RDIMM) memory module, designed to meet the rigorous demands of modern server and workstation environments. It operates at a high frequency of 3200MHz, providing a substantial data throughput of PC4-25600. This speed is essential for accelerating performance in memory-intensive tasks such as virtualization, database management, scientific computing, and high-frequency trading platforms. As a Registered DIMM, this module incorporates an onboard register that buffers command and address signals. This buffering mechanism reduces the electrical load on the memory controller, enabling greater system stability and the installation of more memory modules per channel. The 2Rx4 configuration indicates a dual-rank design, where each rank utilizes x4 (4-bit-wide) DRAM chips. This architecture can enhance performance by allowing for more simultaneous memory accesses, particularly beneficial in multi-processor systems. With a CAS Latency (CL) of 22, the module offers a precise timing for memory operations. A key feature is its integrated ECC (Error-Correcting Code) capability, which is critical for maintaining data integrity and system reliability. ECC automatically detects and corrects single-bit errors and detects multi-bit errors, preventing data corruption and system crashes. The module operates at a standard 1.2V, contributing to energy efficiency in large-scale deployments. The MTA36ASF8G72PZ-3G2E1VI represents a robust and high-performance memory solution for enterprise-level computing.


