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Micron MTA36ASF4G72PZ-2G3B1RK 32GB DDR4-2400MHz RDIMM 2Rx4 CL17 Memory

Micron MTA36ASF4G72PZ-2G3B1RK 32GB DDR4-2400MHz RDIMM 2Rx4 CL17 Memory

SKU:MTA36ASF4G72PZ-2G3B1RK
  • Capacity: 32GB
  • Memory Type: DDR4 SDRAM
  • Form Factor: RDIMM (Registered DIMM)
  • Speed: 2400MHz (PC4-19200)
  • Rank: 2Rx4 (Dual Rank x4)
  • CAS Latency: CL17
  • Voltage: 1.2V
  • ECC: Yes (Error-Correcting Code)
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Product Overview

The Micron MTA36ASF4G72PZ-2G3B1RK is a 32GB DDR4 RDIMM memory module designed for high-performance computing environments. It operates at a speed of 2400MHz with a CAS latency of 17, providing efficient data transfer for demanding applications.

Technical Information

Memory Size32GB
Memory TypeDDR4 SDRAM
Memory Speed2400MHz
Form FactorRDIMM

Additional Specifications

Rank2Rx4
CAS LatencyCL17
Voltage1.2V
ECCYes

Product Description

This Micron 32GB DDR4 RDIMM, model MTA36ASF4G72PZ-2G3B1RK, is engineered for server and workstation applications requiring robust memory performance and reliability. Its DDR4 technology offers significant improvements in bandwidth and power efficiency compared to previous generations. The module features a 2Rx4 configuration, indicating it is dual-ranked with each rank utilizing x4 data width. This configuration can enhance performance in certain workloads by allowing the memory controller to access different ranks independently. The 2400MHz speed ensures rapid data access, crucial for memory-intensive tasks such as virtualization, large database operations, and scientific simulations. With a CAS Latency (CL) of 17, this RDIMM strikes a balance between speed and timing, providing efficient operation. The registered design (RDIMM) includes an onboard register to reduce electrical load on the memory controller, enabling higher memory capacities and improved signal integrity in systems with many memory modules. It also incorporates ECC (Error-Correcting Code) functionality to detect and correct single-bit errors, enhancing system stability and data integrity.

Condition:Refurbished

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