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Micron MTA18ASF1G72PDZ-2G6E1QG 8GB DDR4-2666MHz RDIMM 2Rx8 CL19 Memory
- Capacity: 8GB
- Memory Type: DDR4 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 2666MHz (PC4-21300)
- Organization: 2Rx8 (2 Ranks x 8 Bits)
- CAS Latency: CL19
- Voltage: 1.2V
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Micron MTA18ASF1G72PDZ-2G6E1QG is an 8GB DDR4 RDIMM memory module, representing a significant advancement in memory technology. It operates at a faster speed of 2666MHz with a CAS latency of 19, delivering enhanced performance for modern servers. This module is configured as 2 ranks x 8 bits, optimized for efficient data access in demanding enterprise environments.
Technical Information
| Capacity | 8GB |
| Memory Type | DDR4 SDRAM |
| Form Factor | RDIMM |
| Speed | 2666MHz |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL19 |
| Voltage | 1.2V |
| ECC | Yes |
Product Description
The Micron MTA18ASF1G72PDZ-2G6E1QG is a state-of-the-art 8GB DDR4 Registered DIMM (RDIMM) module, engineered to meet the rigorous demands of contemporary server and data center environments. DDR4 technology offers substantial improvements over DDR3, including higher data transfer rates, lower operating voltage, and increased power efficiency. This module is designed to provide robust performance and reliability for a wide array of enterprise computing workloads. This module features an 8GB capacity and is organized as 2 ranks of 8 bits (2Rx8). The dual-rank configuration enhances performance by allowing the memory controller to interleave accesses across the two ranks, effectively increasing bandwidth. Operating at a speed of 2666MHz (designated as PC4-21300), it delivers significantly faster data throughput compared to older DDR3 modules. The CAS Latency (CL) is 19, which is typical for DDR4 modules at this speed, balancing latency with overall bandwidth. As an RDIMM, it includes an onboard register that buffers address and command signals, reducing the electrical load on the memory controller. This allows for greater memory scalability and stability in systems with many memory modules. The MTA18ASF1G72PDZ-2G6E1QG also incorporates Error-Correcting Code (ECC) capabilities, which are essential for maintaining data integrity in critical server operations by detecting and correcting memory errors. The lower operating voltage of 1.2V contributes to reduced power consumption and heat generation, aligning with the energy-efficiency goals of modern data centers.
