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Micron MT9HTF12872FY-667AZE4ES 1GB DDR2-667MHz FB-DIMM 1Rx8 CL5 Memory
- Capacity: 1GB
- Type: DDR2 FB-DIMM
- Speed: 667MHz
- Configuration: 1Rx8 (Single Rank, 8 bits wide)
- Latency: CL5
- Interface: Fully Buffered DIMM (FB-DIMM)
- Manufacturer: Micron
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Product Overview
The Micron MT9HTF12872FY-667AZE4ES is a 1GB DDR2 Fully Buffered DIMM (FB-DIMM) memory module. It operates at 667MHz with a CL5 latency and a 1Rx8 configuration, designed for server and workstation environments requiring high memory bandwidth and capacity.
Technical Information
| Capacity | 1 GB |
| Memory Type | DDR2 |
| Form Factor | FB-DIMM |
| Speed | 667 MHz |
Additional Specifications
| Rank | 1Rx8 |
| CAS Latency | CL5 |
| Manufacturer | Micron |
Product Description
The Micron MT9HTF12872FY-667AZE4ES is a 1GB DDR2 memory module specifically designed in the FB-DIMM (Fully Buffered DIMM) form factor. FB-DIMMs were developed to overcome certain signaling limitations of traditional DIMMs, allowing for higher memory capacities and speeds in server and workstation platforms. This module operates at a frequency of 667MHz, providing substantial bandwidth for memory-intensive applications. This particular module is organized as 1Rx8, indicating a single rank with an 8-bit data width. The CAS Latency (CL) is rated at CL5, which is a measure of the delay between the memory controller requesting data from a memory module and the data being available. Lower CAS latency generally contributes to better memory performance. The FB-DIMM design incorporates an Advanced Memory Buffer (AMB) chip on each module, which serializes and deserializes data signals. This buffering helps to reduce electrical loading on the memory controller, enabling systems to support more memory modules and achieve higher overall memory capacities. These modules are typically found in enterprise-grade servers and high-performance workstations that require robust memory configurations.
