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Micron MT36JSZ51272PDY-1G1D1DD 4GB DDR3-1066MHz RDIMM 4Rx8 CL7 Memory
- 4GB DDR3 Memory Capacity
- DDR3-1066MHz Speed (PC3-8500)
- Registered DIMM (RDIMM)
- 8-rank organization (4Rx8)
- CAS Latency (CL) of 7
- ECC (Error-Correcting Code) support
- 1.5V Voltage
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Product Overview
The Micron MT36JSZ51272PDY-1G1D1DD is a 4GB DDR3 Registered DIMM (RDIMM) memory module. It operates at a speed of 1066MHz with timings of CL7, featuring an 8-rank organization (4Rx8). This module is designed for servers and high-performance workstations requiring significant memory capacity and reliability.
Technical Information
| Manufacturer | Micron |
| Part Number | MT36JSZ51272PDY-1G1D1DD |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM (Registered DIMM) |
| Capacity | 4GB |
Additional Specifications
| Speed | 1066MHz (PC3-8500) |
| Rank | 8-rank (4Rx8) |
| CAS Latency (CL) | 7 |
| Voltage | 1.5V |
| ECC | Yes |
Product Description
The Micron MT36JSZ51272PDY-1G1D1DD is a high-density 4GB DDR3 Registered DIMM (RDIMM) memory module, engineered for demanding server and workstation environments. Operating at a clock speed of 1066MHz, it corresponds to a PC3-8500 speed rating, providing substantial bandwidth for data-intensive applications. The module features an 8-rank configuration, specifically organized as 4 banks of 8 bits each (4Rx8), which allows for increased memory density and improved performance characteristics in compatible systems. This RDIMM incorporates Error-Correcting Code (ECC) functionality, which detects and corrects single-bit errors and detects multi-bit errors, significantly enhancing data integrity and system reliability. The registered nature of the DIMM means it includes a register chip that buffers address and command signals, reducing electrical load on the memory controller and enabling support for larger memory capacities and higher speeds. The CAS Latency (CL) is rated at 7, indicating the number of clock cycles between the memory controller requesting data and the data being available. With a standard operating voltage of 1.5V, this memory module is designed to meet the power efficiency requirements of modern data centers. Its 4GB capacity, combined with DDR3 technology and ECC support, makes it a suitable choice for upgrading or populating servers used for virtualization, database management, scientific computing, and other memory-intensive workloads where stability and performance are paramount.
