#upgradetobetter

Home/Memory/Server Memory/Micron MT36HVS51272PY-53EEZES 4GB DDR2-533MHz RDIM...
Micron MT36HVS51272PY-53EEZES 4GB DDR2-533MHz RDIMM 2Rx4 CL4 Memory

Micron MT36HVS51272PY-53EEZES 4GB DDR2-533MHz RDIMM 2Rx4 CL4 Memory

SKU:MT36HVS51272PY-53EEZES
  • 4GB DDR2 SDRAM capacity.
  • Speed: 533MHz (PC2-4200).
  • Type: Registered DIMM (RDIMM).
  • Configuration: 2Rx4 (Dual Rank, x4 data width).
  • Voltage: 1.8V.
  • CL4 latency.
  • Designed for server and workstation applications.
Get a Quick Price Quote

Click on Inquire to get latest price

Free U.S. Ground Shipping

Typically 1-2 handling + 3-7 transit days

Purchase orders accepted

For government, enterprise, data center, and small business customers.

Bulk Purchase Inquiry

Volume pricing and availability

Details

Product Overview

The Micron MT36HVS51272PY-53EEZES is a 4GB DDR2 Registered DIMM (RDIMM) memory module. It operates at a speed of 533MHz (PC2-4200) and features a 2Rx4 configuration, indicating two ranks of memory chips with four data channels per rank. This module is designed for servers and high-performance workstations requiring reliable and high-capacity memory.

Technical Information

ModelMT36HVS51272PY-53EEZES
BrandMicron
Capacity4GB
Memory TypeDDR2 SDRAM

Additional Specifications

Form FactorRDIMM
Speed533MHz (PC2-4200)
Configuration2Rx4
CAS LatencyCL4

Product Description

The Micron MT36HVS51272PY-53EEZES is a high-quality 4GB DDR2 Registered DIMM (RDIMM) memory module, engineered for demanding server and workstation environments. Operating at a frequency of 533MHz, which corresponds to a PC2-4200 speed rating, this module provides substantial bandwidth for memory-intensive applications. The RDIMM form factor includes onboard registers that help reduce electrical load on the memory controller, improving stability and allowing for higher memory capacities and speeds in systems that support it. The 2Rx4 configuration signifies that the module contains two ranks of memory chips, with each rank utilizing a x4 data interface. This dual-rank design can offer performance benefits in certain server architectures by allowing the memory controller to access different ranks concurrently, potentially improving efficiency. The CL4 (CAS Latency 4) timing indicates the number of clock cycles required for the memory module to respond to a column address strobe command, representing a balance between speed and latency for DDR2 memory. This specific memory module is designed to meet the rigorous demands of enterprise-level computing, where reliability, performance, and capacity are paramount. It is suitable for upgrading existing server systems or for building new workstations that require robust memory solutions. Compatibility should always be verified with the specific server or motherboard manufacturer's specifications to ensure proper function and optimal performance.

Condition:Refurbished

Related Products

Loading Related Inventory...
Micron MT36HVS51272PY-53EEZES 4GB DDR2-533MHz RDIMM 2Rx4 CL4 Memory | CoreRex