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Hynix HMT42GR7MFR4A-PBT8 16GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory
- Capacity: 16GB.
- Type: DDR3 SDRAM.
- Speed: 1600MHz (PC3-12800).
- Form Factor: 240-pin Registered DIMM (RDIMM).
- Configuration: 2Rx4 (Dual Rank, x4 Data Width).
- Latency: CL11.
- ECC: Registered ECC.
- Designed for servers and workstations.
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Product Overview
The Hynix HMT42GR7MFR4A-PBT8 is a 16GB DDR3-1600MHz Registered DIMM (RDIMM) memory module. It features a 2Rx4 configuration and CL11 latency, designed for high-performance servers and workstations requiring significant memory capacity and speed.
Technical Information
| Manufacturer | Hynix |
| Part Number | HMT42GR7MFR4A-PBT8 |
| Memory Type | DDR3 SDRAM |
| Capacity | 16GB |
| Speed | 1600MHz (PC3-12800) |
Additional Specifications
| Form Factor | 240-pin RDIMM |
| Rank | 2Rx4 (Dual Rank, x4) |
| CAS Latency | CL11 |
| ECC | Registered ECC |
Product Description
The Hynix HMT42GR7MFR4A-PBT8 is a high-capacity 16GB memory module engineered for demanding server and workstation environments. It utilizes DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) technology, operating at a speed of 1600MHz, which corresponds to a PC3-12800 data rate. This speed is crucial for applications that require rapid data access and high throughput, such as virtualization, large database operations, scientific computing, and content creation. This module is a Registered DIMM (RDIMM), meaning it incorporates a register chip that buffers command and address signals. This buffering reduces electrical load on the memory controller, allowing for more memory modules to be installed per channel and improving overall system stability, especially in systems with a large number of memory slots. It also features Error-Correcting Code (ECC) functionality, specifically Registered ECC, which detects and corrects single-bit errors, enhancing data integrity and system reliability – a critical requirement for mission-critical applications. The 2Rx4 designation indicates that the module is dual-ranked, with each rank using x4 (4-bit) DRAM devices. Dual-rank modules can offer performance benefits by allowing the memory controller to interleave accesses between ranks, potentially improving efficiency. The CAS Latency (CL) of 11 signifies the number of clock cycles required for the memory module to respond to a column read command. Combined, these specifications make the HMT42GR7MFR4A-PBT8 a robust and performant memory solution for enterprise-grade computing platforms that demand substantial memory resources and high reliability.



