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Hynix HMT351U6EFR8C-PBN0AA 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 240-Pin UDIMM Dual Ran...
- Capacity: 4GB
- Type: DDR3 SDRAM
- Form Factor: UDIMM (Unbuffered DIMM)
- Speed: 1600MHz (PC3-12800)
- Configuration: Dual Rank (implied by 'Dual Ran...' in title)
- Latency: CL11
- Voltage: 1.5V
- Non-ECC, Unbuffered for standard systems
HMT351U6EFR8C-PBN0AA isn't on our shelf today — we source it to order. Request a quote and we'll confirm price and lead time within one business day.
Key specifications
See full specs ↓- Memory Type
- DDR3 SDRAM
- Capacity
- 4GB
- Form Factor
- UDIMM
- Speed
- 1600MHz
- Part Number
- HMT351U6EFR8C-PBN0AA
- CAS Latency
- CL11
Product details
This Hynix 4GB DDR3 UDIMM memory module operates at 1600MHz (PC3-12800) with CL11 latency. It is a non-ECC, unbuffered module designed for mainstream desktop computers and workstations requiring reliable performance.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 4GB |
| Form Factor | UDIMM |
| Speed | 1600MHz |
Additional Specifications
| Part Number | HMT351U6EFR8C-PBN0AA |
| CAS Latency | CL11 |
| ECC | No |
| Buffered | Unbuffered |
Description
The Hynix HMT351U6EFR8C-PBN0AA is a 4GB DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module designed for standard desktop computers and workstations. This module is an Unbuffered DIMM (UDIMM), which means it directly interfaces with the memory controller without an intermediate register. This configuration is common in consumer and mainstream business systems, offering a balance of performance, cost, and power efficiency. Operating at a speed of 1600MHz, this module corresponds to the PC3-12800 standard, providing a theoretical peak data transfer rate of 12,800 MB/s. This speed offers a significant performance improvement over previous DDR generations, making it suitable for multitasking, gaming, and general productivity applications. The module is specified with a CAS Latency (CL) of 11 clock cycles, which is a typical latency for DDR3 modules at this speed. It operates at a standard voltage of 1.5V, which is lower than DDR2, contributing to reduced power consumption and heat generation. This Hynix memory module is non-ECC (Error-Correcting Code), meaning it lacks the hardware-level error detection and correction capabilities found in ECC memory. While this makes it more widely compatible with standard motherboards, it also means that random memory errors are not automatically corrected, which could be a consideration for mission-critical applications. The 4GB capacity is a common size for modern computing needs, providing ample memory for most operating systems and applications. The 'Dual Ran...' in the title suggests it is a dual-rank module, which can offer performance benefits in certain memory access scenarios.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
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