
Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
Hynix HMT31GR7BFR4C-PBD8 8GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory
- 8GB capacity for increased system memory
- DDR3 SDRAM technology for efficient data transfer
- 1600MHz memory speed for enhanced performance
- Registered DIMM (RDIMM) for improved signal integrity and stability
- 2Rx4 module organization (Dual Rank, x4 data width)
- CL11 CAS Latency for timely data access
- 1.5V voltage for standard DDR3 operation
Click on Inquire to get latest price
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
The Hynix HMT31GR7BFR4C-PBD8 is an 8GB DDR3 Registered DIMM (RDIMM) memory module. It is designed for servers and high-performance workstations requiring reliable and efficient memory.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 8GB |
| Speed | 1600MHz |
| Form Factor | DIMM |
Additional Specifications
| Module Type | RDIMM |
| Rank | 2Rx4 |
| CAS Latency | CL11 |
| Voltage | 1.5V |
Product Description
The Hynix HMT31GR7BFR4C-PBD8 is a high-density 8GB Registered Dual In-line Memory Module (RDIMM) that operates at a speed of 1600MHz. This module utilizes DDR3 SDRAM technology, offering a significant upgrade in bandwidth and efficiency compared to previous DDR generations. The 'R' in RDIMM signifies that it is registered, meaning it incorporates a register between the DRAM chips and the memory controller. This register buffers the address and command signals, reducing electrical load on the memory controller and allowing for more memory modules to be installed per channel, thereby enhancing system stability and scalability. The module is organized as 2Rx4, indicating it is dual-ranked with a x4 data width per DRAM chip. Dual-rank modules can offer performance benefits by allowing the memory controller to access different ranks independently, potentially improving efficiency. The CAS Latency (CL) is rated at CL11, which refers to the number of clock cycles it takes for the memory module to respond to a column address command. A lower CL value generally indicates faster response times. Designed primarily for server and workstation environments, the HMT31GR7BFR4C-PBD8 is built to meet the demanding requirements of continuous operation and heavy workloads. Its 1.5V operating voltage is standard for DDR3 memory. This module is an ideal choice for upgrading existing server memory configurations or for building new systems that require robust and reliable memory performance.



