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Hynix HMT31GR7BFR4C-H9D7-N 8GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory

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Hynix HMT31GR7BFR4C-H9D7-N 8GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory

SKU HMT31GR7BFR4C-H9D7-N
Brand Hynix
  • 8GB DDR3 SDRAM capacity
  • Speed: 1333MHz (PC3-10600)
  • Registered DIMM (RDIMM) for server environments
  • Rank: 2Rx4 (Dual Rank, x4 Data Width)
  • CAS Latency: CL9
  • Voltage: 1.5V
  • ECC (Error-Correcting Code) support
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Key specifications

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Memory Type
DDR3 SDRAM
Capacity
8GB
Speed
1333MHz
Form Factor
RDIMM
Rank
2Rx4
CAS Latency
CL9

Product details

The Hynix HMT31GR7BFR4C-H9D7-N is a high-performance 8GB DDR3 RDIMM memory module. Designed for servers and workstations, it operates at a speed of 1333MHz and features a 2Rx4 rank configuration with CL9 latency. This module is ideal for memory-intensive applications requiring reliable and fast data access.

Technical Information

Memory TypeDDR3 SDRAM
Capacity8GB
Speed1333MHz
Form FactorRDIMM

Additional Specifications

Rank2Rx4
CAS LatencyCL9
ManufacturerHynix

Description

The Hynix HMT31GR7BFR4C-H9D7-N is a high-density 8GB Registered DIMM (RDIMM) module engineered for demanding server and workstation applications. It utilizes DDR3 SDRAM technology, operating at a clock speed of 1333MHz, which translates to a bandwidth of PC3-10600. This speed is crucial for systems that require rapid data processing and efficient multitasking, making it suitable for virtualization, database management, and high-performance computing environments. The module's 2Rx4 configuration signifies that it is dual-ranked with a x4 data width per rank. This architecture can offer performance advantages in certain server workloads by allowing the memory controller to access different ranks independently, potentially increasing throughput. Furthermore, as an RDIMM, it incorporates a register that buffers command and address signals, reducing electrical load on the memory controller and enabling higher memory capacities and speeds in multi-module configurations. Error-Correcting Code (ECC) functionality is a standard feature of this memory module, providing enhanced data integrity and system reliability. ECC memory can detect and correct single-bit errors on the fly, which is critical for mission-critical applications where data accuracy is paramount. The CL9 CAS latency indicates the number of clock cycles required for the memory to respond to a column address command, offering a balance between speed and performance for its class.

Condition: Refurbished

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