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Hynix HMT125U6DFR8C-H9-N 2GB DDR3-1333MHz Non-ECC Unbuffered CL9 Memory
- Capacity: 2GB
- Type: DDR3 SDRAM
- Form Factor: DIMM (184-pin)
- Speed: 1333MHz (PC3-10600)
- Latency: CL9
- ECC: Non-ECC
- Registered: Unbuffered
- Voltage: 1.5V
- Application: Server/Workstation Memory
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Product Overview
This Hynix HMT125U6DFR8C-H9-N is a 2GB DDR3 memory module. It is designed for servers and workstations, offering reliable performance for memory-intensive applications.
Technical Information
| Brand | Hynix |
| Part Number | HMT125U6DFR8C-H9-N |
| Capacity | 2GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | DIMM |
| Pin Count | 184-Pin |
Additional Specifications
| Speed | 1333MHz |
| Module Type | PC3-10600 |
| CAS Latency | CL9 |
| ECC | Non-ECC |
| Registered | Unbuffered |
| Voltage | 1.5V |
Product Description
The Hynix HMT125U6DFR8C-H9-N is a 2GB DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module designed for server and workstation applications. Operating at a speed of 1333MHz (also known as PC3-10600), this module provides efficient data transfer rates suitable for demanding computing environments. The module utilizes a standard 184-pin DIMM form factor, ensuring compatibility with a wide range of server motherboards that support DDR3 memory technology. This particular memory module is specified as Non-ECC (Error-Correcting Code) and Unbuffered. Non-ECC memory is typically used in systems where data integrity is managed at the application level or where the cost-effectiveness of standard memory is prioritized. Unbuffered memory directly accesses the memory controller without an intermediate register, which can offer slightly lower latency in some configurations. The CAS Latency (CL) is rated at 9, indicating the number of clock cycles required for the memory to respond to a column command. With a standard operating voltage of 1.5V, this Hynix memory module adheres to the typical power requirements for DDR3 memory. Its 2GB capacity makes it suitable for augmenting existing memory configurations or for systems that require smaller, specific memory footprints. It is a reliable component for enhancing system performance in environments that benefit from increased RAM capacity and speed, such as running virtual machines, databases, or complex software applications.


