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Hynix HMT125R7BFR8C-H9TB-AB-C 2GB DDR3-1333MHz RDIMM 2Rx8 CL9 Memory
- Capacity: 2GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: PC3-10600 (1333MHz)
- Configuration: 2Rx8 (Dual Rank, x8)
- CAS Latency: CL9
- Voltage: 1.5V
- ECC Support: ECC
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Key specifications
See full specs ↓- Capacity
- 2GB
- Memory Type
- DDR3 SDRAM
- Form Factor
- RDIMM
- Speed
- 1333MHz
- Rank
- 2Rx8
- CAS Latency
- CL9
Product details
The Hynix HMT125R7BFR8C-H9TB-AB-C is a 2GB DDR3 Registered DIMM (RDIMM) memory module. It operates at a speed of 1333MHz with a CAS Latency of 9, designed for server and workstation applications. The 2Rx8 configuration indicates two ranks of eight memory chips, providing a balance of capacity and performance for various computing tasks.
Technical Information
| Capacity | 2GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1333MHz |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL9 |
| Voltage | 1.5V |
| ECC | ECC |
Description
The Hynix HMT125R7BFR8C-H9TB-AB-C is a 2GB DDR3 Registered DIMM (RDIMM) module, engineered for server and workstation platforms that demand reliable memory performance and data integrity. The RDIMM architecture includes an onboard register that buffers address and command signals, reducing the electrical load on the memory controller. This feature is essential for supporting higher memory densities and ensuring stable operation in systems with multiple processors or extensive memory configurations. This module operates at a speed of 1333MHz, corresponding to a PC3-10600 data rate, offering improved bandwidth over slower DDR3 modules. The 2Rx8 configuration indicates that the module is dual-ranked, with each rank composed of eight memory chips. Dual-rank modules can enhance performance by allowing the memory controller to access different ranks in an interleaved fashion, potentially increasing throughput. The CAS Latency of CL9 is a standard timing for this speed, providing a good balance between performance and power consumption. Equipped with ECC (Error-Correcting Code) capabilities, the HMT125R7BFR8C-H9TB-AB-C can detect and correct single-bit memory errors, which is critical for maintaining system stability and preventing data corruption in mission-critical applications. It operates at the standard DDR3 voltage of 1.5V and features a 240-pin connector. This memory module is a suitable choice for upgrading or populating servers and workstations that require dependable, error-corrected memory with moderate capacity and reliable performance.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
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Government, enterprise, data center and small business.
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