
Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
HP VH638AAR-RNG 4GB DDR3-1333MHz PC3-10600 Non-ECC Unbuffered CL9 240-Pin UDIMM 1.5V Dual Rank Memor...
- Capacity: 4GB
- Type: DDR3 SDRAM
- Speed: 1333MHz (PC3-10600)
- Features: Non-ECC, Unbuffered, CL9 Latency
- Form Factor: 240-Pin UDIMM
- Voltage: 1.5V
- Rank: Dual Rank
Click on Inquire to get latest price
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
The HP VH638AAR-RNG is a 4GB DDR3 memory module designed for high-performance computing. It operates at a speed of 1333MHz (PC3-10600) and features Non-ECC, Unbuffered architecture with CL9 latency. This UDIMM is rated at 1.5V and is Dual Rank, making it suitable for demanding server and workstation environments.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 4GB |
| Speed | 1333MHz |
| Module Type | UDIMM |
| Error Correction | Non-ECC |
Additional Specifications
| Registered/Unbuffered | Unbuffered |
| CAS Latency | CL9 |
| Voltage | 1.5V |
| Rank | Dual Rank |
Product Description
The HP VH638AAR-RNG module is engineered to deliver reliable and efficient memory performance for compatible HP systems. Its DDR3 technology represents a significant advancement over previous generations, offering higher bandwidth and lower power consumption. This makes it an ideal choice for applications that require substantial memory capacity and speed. With a capacity of 4GB, this UDIMM provides ample room for multitasking and running memory-intensive applications. The 1333MHz clock speed ensures rapid data access, while the PC3-10600 rating signifies its data transfer rate. The Non-ECC nature is typical for client systems and some entry-level servers where data integrity checks are handled at a higher level or are less critical than performance. The Unbuffered design means that the memory module communicates directly with the memory controller, contributing to lower latency and improved responsiveness. The CL9 latency rating further specifies the timing of the memory operations, indicating a balance between speed and stability. The 1.5V operating voltage aligns with the standard for DDR3 memory, promoting energy efficiency.


