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ATP A416QC4BNTDME 16GB DDR4-2666MHz RDIMM 2Rx8 CL19 Memory
- 16GB DDR4 SDRAM capacity
- 2666MHz (PC4-21300) memory speed
- Registered DIMM (RDIMM) for server/workstation use
- 2Rx8 module configuration (dual rank, 8 bits per chip)
- CAS Latency (CL) of 19
- ECC (Error-Correcting Code) support
- Standard voltage (1.2V)
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Product Overview
The ATP A416QC4BNTDME is a high-capacity 16GB DDR4 Registered DIMM (RDIMM) memory module. It operates at a speed of 2666MHz with timings of CL19, designed for modern server and enterprise environments requiring significant memory bandwidth and capacity.
Technical Information
| Memory Type | DDR4 SDRAM |
| Form Factor | RDIMM |
| Capacity | 16GB |
| Speed | 2666MHz |
Additional Specifications
| Module Rank | 2Rx8 |
| CAS Latency | CL19 |
| Voltage | 1.2V |
| ECC | Yes |
Product Description
This 16GB DDR4 RDIMM from ATP, identified by SKU A416QC4BNTDME, is built to meet the demanding memory requirements of contemporary servers and data centers. Its substantial capacity and advanced DDR4 technology ensure high performance for virtualization, large databases, and complex computational tasks. The Registered DIMM (RDIMM) design incorporates an onboard register that buffers command and address signals, reducing the load on the memory controller. This feature is essential for systems that require a large number of memory modules, enhancing stability and allowing for greater memory expansion. The 2Rx8 organization signifies a dual-rank configuration, where each rank utilizes eight data chips, contributing to improved bandwidth and efficiency. Operating at a speed of 2666MHz (PC4-21300) with a CAS Latency of CL19, this module offers a robust combination of speed and capacity. The integrated ECC functionality is critical for maintaining data integrity in mission-critical applications, providing error detection and correction capabilities to prevent data corruption and ensure system reliability. The standard 1.2V operating voltage aligns with DDR4 power efficiency standards.
